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FDD8647L N-Channel PowerTrench(R) MOSFET
December 2008
FDD8647L
N-Channel PowerTrench(R) MOSFET
40 V, 42 A, 9 m Features
Max rDS(on) = 9 m at VGS = 10 V, ID = 13 A Max rDS(on) = 13 m at VGS = 4.5 V, ID = 11 A Fast Switching 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Applications
Inverter Power Supplies
D
D G
G
S
D -PA52 TO -2 K (TO -252)
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
www..com Symbol VDS
VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 40 20 42 52 14 100 33 43 3.1 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.9 40 C/W
Package Marking and Ordering Information
Device Marking FDD8647L Device FDD8647L Package D-PAK (TO-252) Reel Size 13 '' Tape Width 12 mm Quantity 2500 units
(c)2008 Fairchild Semiconductor Corporation FDD8647L Rev.C
1
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V 40 31 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 13 A, TJ = 125 C VDS = 5 V, ID = 13 A 1.0 2.0 -6 7.1 9.9 10.7 49 9.0 13.0 13.6 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 1230 340 55 0.9 1640 455 80 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 20 V, ID = 13 A VDD = 20 V, ID = 13 A, VGS = 10 V, RGEN = 6 8 3 19 2 20 10 3.8 3.1 16 10 34 10 28 14 ns ns ns ns nC nC nC nC
www..com Drain-Source
VSD trr Qrr
Diode Characteristics
VGS = 0 V, IS = 2.6 A VGS = 0 V, IS = 13 A (Note 2) (Note 2) 0.75 0.84 28 15 1.2 1.3 45 27 V ns nC
Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
IF = 13 A, di/dt = 100 A/s
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a) 40 C/W when mounted on a 1 in2 pad of 2 oz copper
b) 96 C/W when mounted on a minimum pad
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: Starting TJ = 25 C, L = 0.3 mH, IAS = 15.0 A, VDD = 36 V, VGS = 10.0 V.
(c)2008 Fairchild Semiconductor Corporation FDD8647L Rev.C
2
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
100
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 5 V VGS = 4.5 V
3.5
VGS = 3.5 V
80
ID, DRAIN CURRENT (A)
3.0
VGS = 4 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100
ID, DRAIN CURRENT (A)
VGS = 4.5 V
60
VGS = 4 V
40 20 0 0.0
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 3.5 V
VGS = 5 V VGS = 10 V
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
SOURCE ON-RESISTANCE (m)
40
ID = 13 A VGS = 10 V
rDS(on), DRAIN TO
1.6 1.4 1.2 1.0 0.8
ID = 13 A
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
30
20
TJ = 125 oC
10
TJ = 25 oC
0.6 -75
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
www..com Figure 3. Normalized On Resistance
vs Junction Temperature
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
VGS = 0 V
80
ID, DRAIN CURRENT (A) VDS = 5 V
10 1 0.1 0.01
TJ = -55 oC TJ = 150 oC TJ = 25 oC
60 40
TJ = 150
oC
20
TJ = 25 oC TJ = -55 oC
0 1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2008 Fairchild Semiconductor Corporation FDD8647L Rev.C
3
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 13 A
3000 1000
CAPACITANCE (pF)
8
VDD = 20 V
Ciss
6
VDD = 15 V VDD = 25 V
Coss
4 2
100
Crss
f = 1 MHz VGS = 0 V
0 0 5 10
Qg, GATE CHARGE (nC)
15
20
10 0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
60
ID, DRAIN CURRENT (A)
100
IAS, AVALANCHE CURRENT (A)
42
50 40
VGS = 10 V
10
TJ = 25 oC
30
Limited by Package
20
VGS = 4.5 V
TJ = 125 oC
10
RJC = 2.9 C/W
o
1 0.001
0.01
0.1
1
10
100
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
www..com Figure 9. Unclamped Inductive
Switching Capability
200 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
10
P(PK), PEAK TRANSIENT POWER (W)
5
VGS = 10 V
10
4
10
THIS AREA IS LIMITED BY rDS(on)
100 us
10
3
SINGLE PULSE RJC = 2.9 oC/W TC = 25 oC
1 ms 10 ms 100 ms DC
1
SINGLE PULSE TJ = MAX RATED RJC = 2.9 C/W TC = 25 oC
o
10
2
0.1 0.1
1
10
100 200
10 -6 10
10
-5
10
-4
10
-3
10
-2
10
-1
1
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2008 Fairchild Semiconductor Corporation FDD8647L Rev.C
4
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJC
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJc + TC
0.01
SINGLE PULSE RJC = 2.9 C/W
o
0.001 -6 10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 96 C/W
(Note 1b)
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
www..com
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
(c)2008 Fairchild Semiconductor Corporation FDD8647L Rev.C
5
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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Rev. I37
(c)2008 Fairchild Semiconductor Corporation FDD8647L Rev.C
6
www.fairchildsemi.com

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